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Abstract
NEW CRITICAL IMPURITY DENSITY IN METAL-INSULATOR TRANSITION, OBTAINED IN VARIOUS N(P)- TYPE DEGENERATE ALKALI METALS, BEING JUST THAT OF THE CARIERS, LOCALIZED IN EXPONENTIAL BAND TAILS. (I)
Prof. Huynh Van Cong*
ABSTRACT
By basing on the same physical model and treatment method, as used in our recent works (Van Cong, 2023), we will investigate the critical impurity densities in the metal-insulator transition (MIT), obtained in various n(p)-type degenerate [Li, Na, Mg, Ca, and Sr]- alkali metals, being due to the effects of the size of donor (acceptor) d(a)-radius, r_(d(a)), and the high d(a)-density, N, assuming that all the impurities are ionized even at T=0 K. In such n(p)-type degenerate metals, we will determine:(i)-the critical impurity density N_(CDn(CDp)) (r_(d(a))) in the MIT, as that given in Eq. (8), by using an empirical Mott parameter M_(n(p))=0.25, and(ii)-the density of electrons (holes) localized in the exponential conduction (valence)-band tails (EBT), N_CDn(CDp)^EBT (〖 r〗_d(a) ,x), as that given in Eq. (26), by using our empirical Heisenberg parameter,H_(n(p))=0.47137, as given in Eq. (15), according to: for a given〖 r〗_d(a) , N_CDn(CDp)^EBT (〖 r〗_d(a) )≅N_(CDn(CDp)) (r_(d(a))), with a precision of the order of 3.4931×〖10〗^(-7) , as observed in Tables 2-6. In other words, such the critical d(a)-density N_CDn(NDp) (r_(d(a)))), is just the density of electrons (holes) localized in the EBT, N_CDn(CDp)^EBT (〖 r〗_(d(a))), respectively
[Full Text Article] [Download Certificate] https://doi.org/10.5281/zenodo.22267203