Abstract
STUDY OF THE PROCESSES OF DEFECT FORMATION IN SILICON, DOPED WITH COBALT
Sharifa B. Utamuradova*, Zafar O. Olimbekov
ABSTRACT
The processes of formation of deep centers in silicon mixed with cobalt are investigated by means of methods of capacitive spectroscopy. It was found that in n-Si, doped with cobalt formed four deep levels with fixed energy of ionization: Ec-0.20 eV, Ec-0.33 eV, Ec ?0.45 eV and Ec ?0.54 eV with capture cross section of charge carriers ?n=4?10-17 cm2, ?n =2?10-15 cm2, ?n =1.1?10-15 cm2 and ?n =1.5?10-15 cm2, respectively. It is shown that in the samples p-Si, doped with cobalt there is only one level ?v +0.32 eV with charge carrier capture sections ??=2?10-16 cm2, respectively.
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