World Journal of Engineering Research and Technology (WJERT) has indexed with various reputed international bodies like : Google Scholar , Index Copernicus , Indian Science Publications , SOCOLAR, China , International Institute of Organized Research (I2OR) , Cosmos Impact Factor , Research Bible, Fuchu, Tokyo. JAPAN , Scientific Indexing Services (SIS) , Jour Informatics (Under Process) , UDLedge Science Citation Index , International Impact Factor Services , International Scientific Indexing, UAE , International Society for Research Activity (ISRA) Journal Impact Factor (JIF) , International Innovative Journal Impact Factor (IIJIF) , Science Library Index, Dubai, United Arab Emirates , Scientific Journal Impact Factor (SJIF) , Science Library Index, Dubai, United Arab Emirates , Eurasian Scientific Journal Index (ESJI) , Global Impact Factor (0.342) , IFSIJ Measure of Journal Quality , Web of Science Group (Under Process) , Directory of Research Journals Indexing , Scholar Article Journal Index (SAJI) , International Scientific Indexing ( ISI ) , Scope Database , Academia , Research Publication Rating and Indexing , 

World Journal of Engineering Research and Technology

( An ISO 9001:2015 Certified International Journal )

An International Peer Reviewed Journal for Engineering Research and Technology

An Official Publication of Society for Advance Healthcare Research (Reg. No. : 01/01/01/31674/16)

ISSN 2454-695X

Impact Factor : 7.029

ICV : 79.45

WJERT Citation

  All Since 2020
 Citation  172  110
 h-index  7  5
 i10-index  1  0

News & Updation

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    Article are invited for publication in WJERT Coming Issue

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    WJERT Rank with Index Copernicus Value 79.45 due to high reputation at International Level

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    Its Our pleasure to inform you that, WJERT June 2025 Issue has been Published, Kindly check it on https://www.wjert.org/home/current_issues

  • WJERT: JUNE ISSUE PUBLISHED

    JUNE 2025 Issue has been successfully launched on 1 JUNE 2025.

2024 - VOLUME 10, APRIL ISSUE 4


Original Article

INFLUENCE OF YTERBIUM ATOMS ON THE FORMATION OF RADIATION DEFECTS WHEN IRRADIATING SILICON WITH 60Co γ−QUANTUMS

Kh. S. Daliev, Sh. Kh. Daliev, M. B. Bekmuratov*, K. M. Fayzullaev and Sh. A. Yusupova

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SPILLWAY SURFACE PROTECTION FROM CAVITATION DAMAGES

Novikova Inna* and Kupriyanov Vladimir

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वर्तमान युग के पुस्तकालयोें में सूचना संचार प्रौद्योगिकी (आईसीटी) की भूमिका

विक्रम सिंह, डाॅ. गिरजा शंकर पटेल

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ARTIFICIAL INTELLIGENCE CRIME: EXPLORING MALICIOUS EXPLOITS AND RISKS

E. Sree Shanmitha*, Kommineni Venkata Naga Hyma, Palle Venu Madhav and Banothu Ramji

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CYBERGUARD: A COMPREHENSIVE CYBER BULLYING DETECTION AND SUPPORT SYSTEM

*Dr. M. Hemalatha and Prasanth S.

Abstract Article View (513) Article Download (187) Certificate Download

Review Article

RESEARCH ON PT SYMMETRY AND SYSTEM ENERGY IN INDUCTIVELY COUPLED CIRCUITS

Zhang Miaomiao*

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NEW CRITICAL IMPURITY DENSITY IN METAL-INSULATOR TRANSITION, OBTAINED IN VARIOUS N(P)- TYPE DEGENERATE CRYSTALLINE ALLOYS, BEING JUST THAT OF CARIERS LOCALIZED IN EXPONENTIAL BAND TAILS

Prof. Huynh Van Cong*

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SIGNSPEAK: BRIDGING COMMUNICATION THROUGH DEEP LEARNING

Sathvik Rao*, Shruthi D. V. (Assistant Professor)*, Sandeepa T. N., Anirudha R. and
Keerthan V.

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DUAL AMPLITUDE ENVELOPE SYNCHRONIZATION IN PERIODICALLY COUPLED OSCILLATORS

Jing Zeng*

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ROLLING STRIP THICKNESS CONTROL USING I-P, I-PD AND PIFIRST ORDER OMPENSATORS COMPARED WITH AN ADAPTIVE PI CONTROLLER

Galal Ali Hassaan*

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ADVANCEMENTS IN MOTOR DRIVE SYSTEMS USING FOPID CONTROLLED BOOTSTRAP CONVERTER WITH SVM INVERTER

A. Vishnu Kumar* and V. Jayalakshmi

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METHOD OF READING INFORMATION ON THE BASIS OF MEMORY ELEMENTS WITH CHARGE-COUPLED DEVICES

E. А. Кerimov*

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NEW CRITICAL DENSITY IN METAL-INSULATOR TRANSITION, OBTAINED IN VARIOUS N(P)- TYPE DEGENERATE CRYSTALLINE ALLOYS, BEING JUST THAT OF CARIERS LOCALIZED IN EXPONENTIAL BAND TAILS. (II)

Prof. Dr. Huynh Van Cong*

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RECENT INNOVATIONS IN LANGUAGE THEORY AND COMPILERS: AN IN-DEPTH ANALYSIS

Mamadou Mouctar Diallo, Ibrahima Toure, Binko Mamady Toure and Yacouba Camara*

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CRITICAL DENSITY IN METAL-INSULATOR TRANSITION, OBTAINED IN N(P)- TYPE DEGENERATE [ ]- CRYSTALLINE ALLOYS, AND EXPLAINED BY THAT OF CARIERS LOCALIZED IN EXPONENTIAL BAND TAILS. (III)

Prof. Dr. Huynh Van Cong*

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AI DESKTOP ASSISTANT

B. Ashish Karagond*, Shruthi D. V.*, Himavanth A. Bhat*, Samarth H. M.* and Rahul D.*

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